Indian semiconductor ecosystem: News, Updates & Discussions.

SSPL has already developed GaN MMIC for UHF, X-band, C-band & Ku-band radar:
1739560823512.png
SSPL has also have developed 130 W HPA GaN HEMT. So far DRDO radars relied on SSPL developed 100 W HPA GaN HEMTs. The American SPY-7 radar uses ~140 W HPA GaN HEMTs. We will get to ~140 W before the P-18 design is finalized.

This poster also says 0.1-micron GaN node fab technology is under development. That has been under development for some time now. Most of the machines will be domestically made.

At present, SSPL fabricates GaN/GaAs HEMTs on 0.5- & 0.7-micron (G5a & G7a) MESFET nodes. The new node will bring a 5 to 7 times reduction in gate length. It will take a minimum of 5 more years to establish the new fab. The next gen radars will benefit from this.
1739561833007.png
1739561850461.png
 
  • Love
Reactions: Rajput Lion
Union Minister of Information and Broadcasting Ashwini Vaishnaw revealed that India's first "Made-in-India" semiconductor chip will be launched by September or October 2025.
The chip, developed in collaboration with Tata Electronics and Powerchip Semiconductor Manufacturing Corporation (PSMC), will be produced at India's first semiconductor fabrication plant in Dholera, Gujarat.
Vaishnaw also announced that the government has granted Rs 334 crore to the Indian Institute of Science (IISc), Bengaluru, for research and development in gallium nitride (GaN) technology. GaN is a key component in semiconductors used in telecom and power applications.

Source: First-ever made-in-India chip from Tata Electronics gets a 'launch timeline' - The Times of India
 
Indian scientists design 31.16%-efficient 2D-3D perovskite solar cell

Scientists in India have simulated a novel perovskite solar cell that combinies a Dion-Jacobson 2D layer with a 3D halide perovskite. The design showed improved stability compared to reference cells without the DJ-2D layer.

February 20, 2025
By Valerie Thompson
1740243054442.png
The diagram of the 2D-3D halide perovskite solar cell. Image: University of New Delhi, India

A research team in India using a computational approach designed a perovskite solar cell combining a Dion-Jacobson (DJ) 2D layer with a 3D lead-free halide perovskite, a combination that could potentially achieve a power conversion efficiency of 31.16% and improved stability results

Two-dimensional (2D) Dion-Jacobson (DJ) phase perovskites have sparked interest in the scientific community due to their stability against harsh environmental conditions and their competitive performance in optoelectronic applications. Solar cells based on DJ perovskites, however, have shown comparatively poor performance compared to their 3D counterparts to date.

The research team said that it selected a DJ 2D material known as PeDAMA4Pb5I16, and a 3D lead-free perovskite material known as CsGeI3-xBrx, and explored the effects of combining the two active layers in a perovskite solar cell. It used the SCAPS-1D solar cell capacitance software, developed by the University of Ghent, to simulate the novel cell configuration

“Our main focus is to design and propose tandem solar cell devices in perovskite/perovskite and perovskite-silicon configurations with high efficiency and stability, including linear and parabolic grading strategies in the cell devices,” research co-author Manish Kumar told pv magazine.

The optimized cell design is based on silver (Au) rear contacts, a cuprous oxide (Cu2O) hole transport layer (HTL), a 2D perovskite layer made of PeDAMA4Pb5I16, a 3D layer of CsGeI3-xBrx, an electron transport layer (ETL) based on phenyl-C61-butyric acid methyl ester (PCBM), and a front contact of fluorine-doped tinoxide (FTO).

The team said that it analyzed the effects of a variety of ETLs and HTLs, active layer thicknesses, series and shunt resistances, and temperature variations. “The best results were obtained with a thickness 0.1 μm of 2D layer and 1 μm of 3D perovskite layer, defect density (Nt) of 1 × 1013 cm−3, and shallow acceptor density (NA) of 1 × 1018 cm−3 for both DJ 2D-3D layers,” it noted.

The champion devices were 31.16%-efficient with an open circuit voltage of 1.5617 V, a short circuit current density of 22.55 mA.cm-2, and a fill factor of 88.47%. Devices made without DJ-2D had an efficiency of 30.88 %, open circuit voltage of 1.5371 V, short circuit current density of 22.10 mA.cm−2 and fill factor of 90.90%.

The team concluded that based on its findings, “the high performance, conversion efficiency, and enhanced stability of DJ 2D-3D PSCs position them not only as a viable option but as a strong alternative for future applications.”

“Our team is working on tandem based solar cell devices via computational approaches, linear and parabolic grading strategies, organic-inorganic mixed halide perovskites-based solar cells, tandem solar cells with silicon and without silicon, and solving stability-related issues by incorporating 2D materials into the PSCs,” Kumar said When asked about what lies ahead.

The group described its work in “Achieving 31.16 % efficiency in perovskite solar cells via synergistic Dion-Jacobson 2D-3D layer design,” pubished in Journal of Alloys and Compounds. The scientists participating in the research were from India's Madan Mohan Malaviya University of Technology, University of Delhi, Manipal University, along the Swedish Institute of Advanced Materials.

Indian scientists design 31.16%-efficient 2D-3D perovskite solar cell
 
  • Like
Reactions: Heroforever
Merck and Linde to Build Specialty Chemicals Plant for Semiconductor manufacturing in India

By CID Editorial Team - February 22, 2025
1740332235215.png
Merck, on its part, said it has been monitoring semiconductor manufacturing developments in India for the past couple of years.

Merck and Linde, producers of specialty chemicals and gases, are exploring opportunities to establish manufacturing plants in India to serve the growing semiconductor industry. Their interest signals a growing global focus on India’s emerging chip manufacturing ecosystem.

The Role of Chemicals and Gases in Semiconductor Manufacturing

Semiconductor production relies on over 150 chemicals and more than 30 gases and minerals. These materials are crucial for ensuring reliability, safety, and innovation in chip fabrication. They enable essential processes such as etching, doping, cleaning, and depositing ultra-pure layers on silicon wafers.

Merck Plans a Specialty Chemicals Plant in India

Merck is in discussions with the Indian government to establish a specialty chemicals plant for semiconductor manufacturing. The proposed investment could range between $300 million and $500 million. The company has yet to finalize the location for the facility.

Merck acknowledged its interest in India’s semiconductor industry, stating that it has been monitoring developments over the past few years. “India is becoming an increasingly important partner in the global semiconductor ecosystem. However, it is too early to discuss specific investment numbers,” a company statement revealed.

Linde to Establish High-Purity Gas Plants

Linde, a global player in industrial gases and engineering, also plans to set up manufacturing facilities for high-purity gases in India. The company affirmed its commitment to supporting India’s semiconductor growth. “Linde actively supports investments in this critical sector and is committed to enabling its expansion in India,” the company stated.

1740332325442.png

Building a Complete Semiconductor Supply Chain

Industry experts emphasize the need for ancillary companies to establish a presence in India. Navin Bishnoi, country head of Marvell India, highlighted the importance of a robust supply chain.

“To build a successful semiconductor ecosystem, we need suppliers of gases, chemicals, wafers, tools, and equipment. These ancillary companies played a crucial role in Taiwan’s semiconductor success and are now gradually entering India,” Bishnoi explained.

Proximity to Fabs is Crucial for Uninterrupted Supply

Neil Shah, Vice President of Research at Counterpoint Research, stressed the importance of proximity for bulk and specialty gas suppliers. Shah noted, “To ensure seamless supply, gas plants should be within 40 kilometers of semiconductor fabs”.

Linde already has a strong presence in India and supplies industries, including the country’s only semiconductor fab, the Semi-Conductor Laboratory in Mohali. Competitors like Korea Gases and Taiyo Nippon Sanso must act quickly to secure a foothold in India’s growing semiconductor market, Shah added.

Conclusion

With India making strides in semiconductor manufacturing, the arrival of global specialty chemical and gas producers is a significant step.

As reported by economictimes.com, investments from companies like Merck and Linde will help establish a stable supply chain, reinforcing India’s position in the global semiconductor ecosystem.

https://chemindigest.com/merck-and-linde-to-build-semiconductor-plants-in-india/
 
India ranks third globally in chip design research papers

Authors from Indian organisations contributed 39,709 papers, which was 8.4% of the global share of 472,819 research papers during the period. India's contribution grew 26% in the five-year period, in line with the country's emerging focus on the critical industry.

 
ISRO & SCL develops 32-bit Microprocessors for space applications

March 15, 2025
1742111248898.png
On March 5, 2025, the first production lots of the 32-bit microprocessors developed for space applications, VIKRAM3201 & KALPANA3201, were handed over to Dr. V. Narayanan, Secretary, DOS /Chairman, ISRO by Shri S. Krishnan, Secretary, MeitY, in a function organised at New Delhi by the Semiconductor Laboratory (SCL), Chandigarh. These microprocessors were designed & developed by the Vikram Sarabhai Space Centre of ISRO in collaboration with SCL, Chandigarh. Dr. Unnikrishnan Nair, Director, Vikram Sarabhai Space Centre, also participated in the function along with the design teams. Dr. Kamaljeet Singh, Director-General of SCL/MeitY and his team provided a brief overview of the activities undertaken for the realization, packaging & qualification of these processors for launch vehicle applications.

1742111274764.png
VIKRAM3201 is the first fully “Make-in-India” 32-bit microprocessor that is qualified for use in the harsh environmental conditions of launch vehicles. The processor was fabricated at the 180nm CMOS semiconductor fab of SCL. This processor is an advanced version of the indigenously designed 16-bit VIKRAM1601 microprocessor which has been flying in the Avionics system of ISRO’s launch vehicles since 2009. A “Make-in-India” version of the VIKRAM1601 processor was subsequently inducted in 2016 after the 180nm semiconductor fab was established at SCL, Chandigarh.

VIKRAM3201 & the VIKRAM1601 has a custom Instruction Set Architecture, with floating-point computation capability and high-level language support for the Ada language. All the software tools such as the Ada compiler, assembler, linker, simulator along with Integrated Development Environment (IDE) are developed in-house by ISRO. A C language compiler is also under development for providing more flexibility to users in other domains. This is the first of its kind in India and has enabled Atmanirbharata in the area of high reliability microprocessors and onboard computers for navigation, guidance & control of launch vehicles. The initial lot of VIKRAM3201 devices was successfully validated in space in the Mission Management Computer of the PSLV Orbital Experimental Module (POEM-4) in the PSLV-C60 mission.

1742111315814.png
KALPANA3201 is a 32-bit SPARC V8 RISC microprocessor and is based on the IEEE 1754 Instruction Set Architecture. The microprocessor has been designed to be compatible with open-source software toolsets along with in-house developed simulator & IDE and has been tested with flight software.

Four other devices that were jointly developed with SCL were also handed over towards significant miniaturisation of the launch vehicle Avionics system. This includes two versions of a Reconfigurable Data Acquisition System (RDAS) integrating multiple indigenously designed 24-bit Sigma-Delta Analog to Digital Converters on a single chip along with a Relay driver Integrated Circuit & a Multi-Channel Low Drop-out Regulator Integrated Circuit for high reliability applications.

1742111360677.png
Relay Driver IC

1742111372721.png
RDAS (Ceramic package)

1742111381012.png
RDAS (Plastic Package)

An MoU was also signed between SCL & Vikram Sarabhai Space Centre of ISRO for the development & delivery of miniaturized unsteady pressure sensors for measuring dynamic pressure in wind tunnels.

ISRO & SCL develops 32-bit Microprocessors for space applications
 
  • Like
Reactions: Zarion
investing billions in one place right next to pakistan must be the smartest thing to do.
GoI doesn't decide where to build the plants, the companies choose the destinations themselves.

The companies choose their location based on what each state government is offering them for their investment.
 
GoI doesn't decide where to build the plants, the companies choose the destinations themselves.

The companies choose their location based on what each state government is offering them for their investment.
They should setup up multilayered air defences and EW Units around such industrial cities. Aakash + MRSAM + XRSAM.
 
  • Like
Reactions: ShiroBarks